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Ab initio electronic properties of dual phosphorus monolayers in silicon

RMIT University, Australia
Daniel Drum (Aggregated by) Salvy Russo (Aggregated by)
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ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Adc&rfr_id=info%3Asid%2FANDS&rft_id=info:doi10.4225/61/557fb99d86a2a&rft.title=Ab initio electronic properties of dual phosphorus monolayers in silicon&rft.identifier=http://dx.doi.org/10.4225/61/557fb99d86a2a&rft.publisher=RMIT University, Australia&rft.description=In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.&rft.creator=Daniel Drum&rft.creator=Salvy Russo&rft.date=2015&rft.relation=http://dx.doi.org/10.1186/1556-276X-9-443&rft_subject=Rmit&rft_subject=Theoretical and Computational Chemistry&rft_subject=Chemical Sciences&rft_subject=Condensed Matter Physics&rft_subject=Physical Sciences&rft.type=dataset&rft.language=English Go to Data Provider

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In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.

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